薄膜铝栅极有机半导体静电感应三极管的试制及动作特性

Preparation and Characteristics of Organic Semiconductor Static Induction Transistor Using Thin Film Al Gate

试制的有机静电感应三极管采用真空蒸镀法和有机色素酞菁铜(CuPc),制成Au/CuPc/Al/CuPc/Au五层结构,制作的薄膜铝栅极有机静电感应三极管,在偏置电压为V_(DS)=3V,V_(GS)=0V时,静态动作电流I_(DS)=1.2×10^(-6)A/mm^2,动态小信号响应频率可达到1000Hz。实验结果表明,与采用MOS结构的CuPc有机薄膜三极管相比,该三极管驱动电压低,呈典型的静电感应三极管不饱和电流-电压特性。

The Fabrication of organic static induction transistors (OSJT) are studied by using copper phthalocy anine (CuPc) dye with standard vacuum evaporated method. The OSITs have five layered structure of Au/CuPc/Al/CuPc/Au. At the bias voltage of VDS = 3V and VGS = 0V, its static operation current is IDS = 1.2 × 10-6A/mm2, and dynamic small signal operation frequency response at ~ 1 000 Hz order. As OSITs Experiment results show that it can operate at low voltage as OSITs with no nosaturation current-voltage characteristics as that of typical static induction transistors.