摘要
本文以氮化钛的 CVD制备为例 ,说明了源物质的选择对 CVD过程的影响。在此基础上 ,综述了化学气相沉积技术在材料制备领域的最新进展。
Based on the preparation of titanium nitride, the effects for the choice of the precursor on the CVD systems have been illustrated. The advances of chemical vapor deposition in the field of material preparation were reviewed.
出处
《化学进展》
SCIE
CAS
CSCD
2003年第5期374-378,共5页
Progress in Chemistry
关键词
化学气相沉积法
制备
氮化钛
源物质
chemical vapor deposition
precursor
titanium nitride
preparation