阵列化锰铜高压传感器的研制

Development of manganin high pressure array sensor

通过传感器的结构设计、敏感材料和封装材料的研制以及采用新的传感器制备工艺,制作了一种新型的薄膜式锰铜传感器。采用熔融石英材料作为绝缘基板。在绝缘基板上沉积锰铜敏感薄膜。并在敏感薄膜的上面沉积SiO2封装层薄膜。根据"后置"式传感器由阻抗匹配原则,计算出铝靶板中的最高压力为51.68GPa,SiO2封装材料中的压力为35.396GPa。

A new kind of thin film manganin sensor is fabricated by developing structure design,new sensing and packaging materials, and adopting new fabrication technique.Manganin thin films are deposited by magnetron sputtering on fused silica substrates,and then covered by a layer of SiO2 thin films through electron beam evaporation. Based on impedance match method of 'back configuration'sensor,the highest pressure in Al is 51.68?GPa and SiO2 is 35.396?GPa. 