K_(0.5)Bi_(4.5-x)Eu_xTi_4O_(15)高温铋层状压电陶瓷光电性能研究

Photoelectric Properties of K_(0.5)Bi_(4.5-x)Eu_xTi_4O_(15) High Temperature Bismuth Layered Piezoelectric Ceramics

铋层状压电陶瓷具有较高的居里温度和良好的热稳定性,被广泛应用于高温、高频电子领域.本文采用传统固相合成法制备了K_(0.5)Bi_(4.5-x)Eu_xTi_4O_(15)高温铋层状无铅压电陶瓷,并详细研究了Eu3+掺杂对K_(0.5)Bi_(4.5-x)Eu_xTi_4O_(15)材料的结构与光电性能的影响.研究结果表明稀土Eu3+掺杂对K_(0.5)Bi_(4.5-x)Eu_xTi_4O_(15)陶瓷的相结构的影响不大:陶瓷均为均一致密的片层状结构.Eu3+掺杂一定程度上促进材料电性能的提高,当x=0.004时,陶瓷综合性能最佳:居里温度Tc=540℃、介电损耗tanδ=0.80%、压电系数d33=19pC/N及剩余极化强度2Pr=9.8μC/cm2.此外,掺杂后的陶瓷样品获得了光致发光性能,在526nm的蓝光激发下,样品呈现出明亮的橙红光.

Bismuth layered photoelectric multifunctional ceramics(BLSFs)have received significant attention and became a hot topic for researchers at home and abroad for their promising applications in high temperature and high frequency photoelectric field because of their high Curie temperature and good thermal stability.In this work,K0.5Bi4.5-xEuxTi4O15 bismuth layered piezoelectric ceramics were prepared by a conventional solid-state reaction method.The effect of Eu3+on the structure and photoelectric properties was studied.Results showed that all ceramics formed a typical bismuth layer structure and a dense microstructure with the plate-like gain morphology.The optimum electric properties can be obtained at the doping amount of 0.004:Tc=540℃,tanδ=0.80%,d33=19 pC/N and 2 Pr=9.8μC/cm2.Moreover,upon the excitation of 526 nm light,the Eu3+doping make the ceramic samples present bright orange light.