Si/SiGe/SiHBT直流特性的可靠性

Reliability of DC characteristics in mesa Si/SiGe/Si HBT

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摘要对单台面SiGeHBT在E-B结反偏应力下直流特性的可靠性进行了研究。研究结果表明,随应力时间的增加,开启电压增加,直流电流增益下降,特别是在低E-B正偏电压时下降明显;而交流电流增益退化缓慢。 The reliability in DC characteristics of single-mesa SiGe HBT is investigated under reverse emitter-base stress due to hot holes.The results show that as the stress time increase,turn-on voltage increase,DC current gain decrease,particularly at low forward base-emitter bias.However,AC current gain degrade slowly.

作者崔福现张万荣

机构地区中国电子科技集团公司十三所北京工业大学

出处《微纳电子技术》 CAS 2003年第10期17-19,共3页 Micronanoelectronic Technology

关键词异质结双极晶体管 HBT 直流特性可靠性 SI/SIGE/SI 硅锗增益 HBT mesa reliability

分类号 TN322.8 [电子电信—物理电子学]

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1CRESSLER J D. SiGe HBT technology: A new contender for Si-based RF and microwave circuits applications [J] . IEEE Transactions on Microwave Theory and Techniques, 1998, 46(5): 572-589.
2GOH I S, HALL S. Parasitic current mechanisms and current stress induced degradation effects in mesa-isolated SiGe heterojunction bipolar transistors [J] . IEE Colloquium (Digest) n 033, 1995, 5/1-5/6.
3SHAFI Z A, MARTIN A S R, WHITEHURST J. Rapid annealing of metastable and stable SiGe heterojunction bipolar transistors [J]. Microelectronics Engineering, 1991, 15: 135-138.
4GOGINENI U, NIU G F, MATHEW S J, et al. Comparison of current gain and low-frequency noise degradation by hot electrons and hot holes under EB stress in UHV/CVD SiGe HBT's [C] . Proceedings of the 1998 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 1998, 172-175.
5KAPOOR A K, LIN C H. Effect of emitter-base reverse bias stress on high frequency parameters of bipolar transistors [C].Proc 29th Int Reliability Phys Syrmp, (IRPS), 1991, 188-192.
6TANG D D, HACKBARTH E, CHEN T. On the very-highcurrent degradations on Si n-p-n transistors [J] . IEEE Transactions on Electron Devices, 1990, 37 (7): 1698-1706.

1廖小平,张中平.Si/SiGe/Si HBT的直流特性和低频噪声[J].电子器件,2003,26(1):22-24. 被引量：1
2Z Matutinovic-Krstelj,齐学参.用减小p^+-n^+结隧穿电流的方法来改进Si/SiGe/Si HBT的基极电流[J].半导体情报,1993,30(2):49-51.
3张万荣,罗晋生,李志国,孙英华,穆甫臣,程尧海,陈建新,沈光地.Si/SiGe/Si HBT频率特性的解析模型与模拟[J].固体电子学研究与进展,1998,18(3):291-301. 被引量：2
4廖小平.与Si工艺兼容的Si/SiGe/SiHBT研究[J].电子器件,2001,24(4):274-278. 被引量：2
5张万荣,李志国,郭伟玲,孙英华,穆甫臣,程尧海,沈光地,罗晋生.Si/SiGe/SiHBT的优化设计[J].半导体技术,1998,23(4):13-18. 被引量：3
6刘学锋,李晋闽,孔梅影,黄大定,李建平,林兰英.用气态源分子束外延生长法制备Si/SiGe/Sinpn异质结双极晶体管[J].Journal of Semiconductors,2000,21(2):142-145. 被引量：4
7司俊杰,杨沁清,王红杰,雷红兵,滕达,王启明,刘学锋,李建民.不同温度下快速热退火对SiGe量子阱光致发光谱的影响[J].Journal of Semiconductors,1998,19(6):477-480. 被引量：2
8张万荣,曾峥,罗晋生.Si／SiGe／Si双异质结晶体管异质结势垒效应（HBE）研究[J].电子学报,1996,24(11):43-47. 被引量：12
9廖超,来萍,李斌,崔晓英.硅脉冲微波功率器件增益退化机理研究[J].电子产品可靠性与环境试验,2007,25(6):4-7. 被引量：2
10张万荣,李志国,王立新,汪东,崔福现,孙英华,程尧海,陈建新,沈光地,罗晋生.Si/SiGe/Si双异质结晶体管(HBT)的负阻特性[J].电子学报,2001,29(8):1132-1134. 被引量：4

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