基于忆阻器的神经突触的设计

Design of synapse based on memristor

基于忆阻器在电路中具有记忆的特性,借助于PSPICE软件进行忆阻器模型以及基于忆阻器的突触电路的建立与仿真。利用磁控溅射方法在Si衬底上制备NiO忆阻器实物。电学测试结果发现,该忆阻器的电阻随着电压的变化而变化,得到了典型的V-I滞回特性曲线。将NiO忆阻器实物连接到突触的硬件电路中,实物测试结果显示出与基于忆阻器的突触仿真电路同样的LTP效应和LTD效应,进一步证实该硬件电路中存在突触可塑性。

In view of the memristor memory in the circuit,the memristor model and synaptic circuits based on memristor are built and simulated by means of PSPICE.The NiO memristor film is successfully prepared on the Si substrate by magnetron sputtering method.The electrical test shows that the resistance of memristor changes with the voltage,displaying the typical V-I characteristic hysteresis curve.The hardware test shows the same LTP and LTD effects when NiO memristor is connected to the synaptic hardware circuit,which further proves the existence of synaptic plasticity.