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具有相同电子浓度Zr-Al-Ni非晶合金的动力学特性研究

Dynamical Characteristics of Zr-Al-Ni Amorphous Alloys with the Same Electronic Concentration
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摘要 本文利用DMA研究了具有相同电子浓度、不同Zr、Al、Ni含量的三种非晶合金的存贮模量 (G’) ,损耗模量 (G”)和内耗 (G”/G’)的动力学特性。结果表明 ,虽然三种非晶合金的电子浓度相同 ,但其动力学特性并不一样。在室温下 ,Zr含量最多的Zr63 Ni18 5Al18 5非晶合金具有最高的 G’ ,在加热速率为 10℃ /min、振动频率为 5Hz的条件下 ,三种非晶均在 30 0℃左右开始发生G”和内耗 ,G”和内耗峰对应的温度随Zr含量的减少向高温方向推移 ,并且峰值降低。结合X射线结构分析得出G’开始下降的温度为晶化温度 ,它低于G”和内耗峰对应的温度。G”和内耗峰并不是出现在晶化的开始 ,而是出现在晶化过程中。 The dynamical characteristics of storage modulus (G'), loss modulus (G') and internal friction (G'/G') of three Zr-Al-Ni bulk amorphous alloys are examined by the method of DMA.The results reveal that the dynamical characteristics of these three alloys are different though they have the same electronic concentration(e/a).At the room temperature,Zr_ 63 Ni_ 18.5 Al_ 18.5 alloy with the largest content of Zr has the largest value of G'. At the heat rate of 10℃/min and the frequency of 5Hz, G' and G'/G' of three alloys all start to occur at about 300℃.The less the content of Zr,the higher the relative temperatures of the summits of G' and G'/G', and the lower the summit values.Combined with the analysis of XRD,it is concluded that the start point temperature of G' dropping is the temperature of crystallization.It is lower than the relative temperature of the summits of G' and G'/G'. The summits of G' and G'/G' occur not at the beginning of crystallization,but during the crystallization.
出处 《金属功能材料》 CAS 2003年第5期18-21,共4页 Metallic Functional Materials
关键词 Zr-Al-Ni合金 非晶合金 电子浓度 内耗 晶化 动力学特性 DMA amorphous alloy e/a internal friction crystallization
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参考文献8

  • 1[1]Inoue A, Zhang T, Masumoto T. [J] .J Non- Cryst Solids, 1993,473:156~158
  • 2[2]Inoue A. [J]. Mater Sci Forum, 1995,691:179~ 181
  • 3[3]Zhang Tn, Inoue A, Masumoto T. [J]. Mater Trans JIM, 1991,32:1005
  • 4[4]Haussler P. [J]. Z Phys, 1983 ,B53:15
  • 5[5]Haussler P. Phys Reports, 1992,222,2: 65
  • 6[6]Shek C H,Wang Y M,Dong C. [J].Mater Sci Eng,2000,A291:78
  • 7[7]Wang Y M,Qiang J B,Xu W P,Dong C,Wong C H and Shek C H.[J].Submitted to Phys Rev,B,2001
  • 8[8]Okumura H, Inoue A, Masumoto T. [J]. J pn J Appl Phys, 1992,31:3403

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