摘要
本文用微波等离子体化学气相沉积方法,以丙酮和氢气作为原料气体,在人造金刚石的(100)(110)面上外延出金刚石,在(111)面上生长出多晶金刚石。
In this paper,diamonds were grown on synthetic diamond subs-trates from a mixed source material of CH_3COCH_3 and hydrogen by micro-wave plasma CVD method.Epitaxial growth on (100) (110) faces of diamondsubstrates and polycrystalline growth on (111) face were observed.
出处
《人工晶体学报》
EI
CAS
CSCD
1992年第2期184-188,共5页
Journal of Synthetic Crystals
基金
国家高技术发展计划新材料领域资助
关键词
金刚石薄膜
等离子体
外延生长
synthetic diamond
diamond film
microwave plasma CVD
epitaxial growth
