摘要
采用提拉法生长出 Bi_(12)GeO_(20)(BGO)晶体,研究了不同生长条件下晶体外形的变化,以及生长条件对晶体质量的影响。当存在外电场时,BGO 晶体表现出双折射,用四波混频方法测试了其位相共轭反射率。
The growth of Bi_(12)GeO_(20) is reported by CZ method in this paper.The variation of the crystal shape under different conditions,the effect ofgrowth conditions on the properties of crystal,and defects of crystal produ-ced in growth process have been researched.The characteristics of piezo-ele-ctricity,SAW,and the effect of phase conjugation have been measured.
出处
《人工晶体学报》
EI
CAS
CSCD
1992年第4期349-352,共4页
Journal of Synthetic Crystals
基金
国家自然科学基金
关键词
缺陷
共轭
晶体生长
BGO crystal
crystal shape
defect
phase conjugation
