摘要
Er^(3+)-Tm^(3+)-Pr^(3+)triply-doped graphene-glass-graphene(GGG) nanosheet waveguide amplifier, which is a promising candidate for integrated photonic devices, is modelled and numerically analyzed. The designed waveguide is composed of a triply-doped tellurite glass core. The core is sandwiched between two graphene layers.The rate and power propagation equations of a heterogeneous multi-level laser medium are set up and solved numerically to study the effects of waveguide length and active ion concentrations on amplifier performance at five different input signal wavelengths(1.310, 1.470, 1.530, 1.600 and 1.650 μm). The analytical results show that rareearth ion dopant concentrations at an order of 10^(26) ion/m^3, waveguide length at 0.1 m and pump power at 100 m W can amplify 1.530 and 1.600 μm input signals with 1 μW power up to approximately 20.0 and 24.0 dB respectively.Finite-difference time-domain(FDTD) simulation results show that mode field radius of GGG waveguide is smaller than that of silicon waveguide. Consequently, GGG waveguide with the same pump and signal power and the same gain-medium length can produce higher gain than silicon waveguide.
Er^(3+)-Tm^(3+)-Pr^(3+)triply-doped graphene-glass-graphene(GGG) nanosheet waveguide amplifier, which is a promising candidate for integrated photonic devices, is modelled and numerically analyzed. The designed waveguide is composed of a triply-doped tellurite glass core. The core is sandwiched between two graphene layers.The rate and power propagation equations of a heterogeneous multi-level laser medium are set up and solved numerically to study the effects of waveguide length and active ion concentrations on amplifier performance at five different input signal wavelengths(1.310, 1.470, 1.530, 1.600 and 1.650 μm). The analytical results show that rareearth ion dopant concentrations at an order of 10^(26) ion/m^3, waveguide length at 0.1 m and pump power at 100 m W can amplify 1.530 and 1.600 μm input signals with 1 μW power up to approximately 20.0 and 24.0 dB respectively.Finite-difference time-domain(FDTD) simulation results show that mode field radius of GGG waveguide is smaller than that of silicon waveguide. Consequently, GGG waveguide with the same pump and signal power and the same gain-medium length can produce higher gain than silicon waveguide.
基金
the National Natural Science Foundation of China(Nos.60377023 and 60672017)
the Program for New Century Excellent Talents in Universities(NCET)
the Shanghai Optical Science and Technology Project(No.05DZ22009)
