金属有机化学汽相沉积生长InGaN薄膜的研究

InGaN Films Grown by Metalorganic Chemical Vapor Deposition

以Al2 O3 为衬底 ,采用金属有机汽相沉积 (MOCVD)技术在GaN膜上生长了InxGa1 -xN薄膜。以卢瑟福背散射 沟道技术和光致发光技术对InxGa1 -xN GaN Al2 O3 样品进行了分析。研究表明 ,金属有机汽相沉积生长高In组分InxGa1 -xN薄膜有一最佳TMIn TEGa摩尔流量比。在一定范围内 ,降低其摩尔流量比 ,合金的生长速率增高 ,In组分提高 ;进一步降低TMIn TEGa摩尔流量比 ,导致In组分下降。研究还表明 ,InGaN薄膜的结晶品质随In组分的增大而下降 ,InGaN薄膜的In组分由 0 0 4增大到 0 10 ,其最低沟道产额比由 4 1%增至 11 0 %。

The InGaN/GaN films were grown on (0001) sapphire substrates by metalorganic chemical vapor deposition (MOCVD) at atmospheric pressure. Properties of these films were investigated by Rutherford backscattering/channeling measurements and photoluminescence technique. The study indicated that there was an optimum TMIn/TEGa ratio to obtain high In mole fraction In x Ga 1-x N films. The In mole fraction in In x Ga 1-x N films will increase by decreasing the TMIn/TEGa ratio in some range. Surface minimum yields χ min of In x Ga 1-x N films changed from 4.1% to 11.0% when the x value of In x Ga 1-x N varied from 0.04 to 0.10.