摘要
用红外吸收光谱法对硅器件晶片的金属杂质玷污问题,热氧化SiO_2膜的质量状况和注氮SOI样品的结构进行分析,得到了有助于优选晶片及其与工艺有关的信息。检测方法是非破坏性的,适合硅材料与器件生产厂用于有关工艺的质量控制。
With the analyses of the metal impurity contamination in silicon de vice wafers, the quality of heat-oxidized SiO_2 films and theoformation of SOI(siliconon insulator)implanted with nitrogen ion samples by IR spe ctrometer, We get some information relating to the producing technologies. of silicon, device wafer, It helps to seek the optimizing processing parameter. The IR detective method is nondestructive. It can be used in the quality control of some related processing of silicon material and device.
关键词
硅片
红外吸收
无损检测
硅器件
infared absorptions
metal impurity contamination
non-damage deteetion
purged silicon wafer
