电化学沉积Cu-In-Se薄膜(英文)

Electrochemical Deposition of Cu-In-Se Thin Films

采用电化学沉积方法在钼箔上制备Cu-Se、In-Se和Cu-In-Se薄膜,对电沉积的工艺参数进行了测试,发现Cu-In-Se是一种诱导共沉积,虽然沉积膜不具备化学计量比,但具有一定的光电性能。

Cu-Se, In-Se and Cu-In-Se thin films have been prepared by electrodepositing method on molybdenum substrates. This paper measures parameter of the electrodeposition process, and discovers the Cu-In-Se thin films are induced codeposition. The Cu-In-Se is not stoichiometric ratio, but is provided with photoelectricity property.