摘要
研究了不同衬底温度,不同掺钇浓度的a-Si:H(Y)膜的红外吸收谱,并与未掺杂的a-Si:H 膜比较。利用吸收峰的积分估算了样品中Si-H 键的数目。
Infrared absorption spectra for the a—Si:H(Y)films prepared at different substratetemperatures and different concentration of dopant yttrium have been studied.A comparisionwith the no-dopant a-Si:H films has been made.The numbers of Si-H bonds in the sampleshas been evaluated by using the integral of absorption peak.
出处
《山东大学学报(自然科学版)》
CSCD
1992年第4期447-452,共6页
Journal of Shandong University(Natural Science Edition)
关键词
非晶硅
薄膜
钇
红外吸收谱
a-Si
H(Y)
concetration of dopand yttrium
integral of absorption peak