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光学光刻的波前工程 被引量:3

The Wave Front of Optical Lithograptly
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摘要 介绍了国内研究光学光刻波前工程的一些成果,如新型移相掩模、投影光刻的邻近效应和掩模加工的邻近效应的组合模拟等。 In this paper,the achievements in scientific research for the wave front of optical lithoyraphy in home are introduced.It includes The new ntase-shift mask and combined simulation for the optical prox-imity effects of projection optical lithography and mask processing.
作者 翁寿松
出处 《电子工业专用设备》 2003年第5期50-52,共3页 Equipment for Electronic Products Manufacturing
关键词 光学光刻 波前工程 移相掩模 光学邻近效应校正 optical lithography wave front PSM OPC.
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  • 1高洁.2004年0.009微米技术有望成为现实[J].国际电子商情,2002,(2):3-3.
  • 2[1]Chao P C et al. Electron-beam fabrication of GaAslow-noise MESFET's usinga new trilayer resist tech-nique. IEEE Electron De-vices ED-32, 1042(1985) .
  • 3[2]Tan K L et al. 94GHz0.1μm T-gate low-noisepseudomorphic InGaAsHEMT's. IEEE ElectronDevices Lett, 1990, 11(12): 585.
  • 4[3]Maile B E. Fabricationlimits of nanometer Tand Г gates: theory andexperiment. J Vac SciTechnol, 1993, 11 (6):2502.
  • 5[4]YAMADA H T et al.Fabrication of 0.2μm gatepseudomorphic invertedHEMT by phase-shiftingtechnology. Solid-StateElectronics, 1985, 38(9): 1631.
  • 6[5]Htilsmann A et al. Edge-phase-shifting lithographyfor sub 0.3μm T-gates.Proc SPIE, 1997, 3051:295.
  • 7[6]Park B S et al. Opticallithography technique withdummy diffraction maskfor 0.20μ m T-shaped gate formation. Proc SPIE, 1995, 2440:850.
  • 8[1]HARADA N, SAITO T, OIKAWA H, et al. 0.1 μm-gate In GaP/InGaAs HEMT technology for millimeter-wave application [J].IEICE trans electron, 1998, E81-C (6): 876-879.
  • 9[2]HANYU I, ASAI S, NUNUKAWA M, et al. Super low-noise HEMTs with a T-shaped WSixgate [J]. Electronics Lett, 1988,(24): 1327-1328.
  • 10[3]CHEN Y, MACINTYRE D, THOMS S.T-gate fabrication using a ZEP520A/UVIII bilayer [ J]. Microelectronic Engineering,2001, 57~58: 939-943.

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