基于库仑阻塞原理的多值存储器

Coulomb blockade three-valued single-electron memory

设计了一种基于库仑阻塞原理的新型单电子多值存储器 .器件包括两个多隧穿结结构和一个单电子晶体管 ,其中单电子晶体管起到一个静电计的作用来实现数据的读取 .两个隧穿结库仑阻塞区域的大小不同使得器件具有三个稳定的存储状态 .利用这个原理可以制备出多值的动态随机存储器和非挥发性的随机存储器 .这种低功耗的单电子多值存储器可以实现信息的超高密度存储 .

We have designed a novel three-valued single-electron memory. This memory comprises two multiple-tunnel junctions (MTJs) and a single-electron transistor which acts as an electrometer. Because the Coulomb gaps of the two multiple-tunnel junctions are different, the device have three stable. states. It is possible to fabricate multiple-valued single-electron dynamic random access memories(DRAM) and nonvolatile random access memories (NOVORAM) The memory, which is promising for high frequency and low power-dissipation, can achieve ultradense data storage.