摘要
介绍采用混合贴装倒扣二极管技术制造的新型 2 4GHz平衡混频器 .并对该混频器进行设计、仿真、加工和测试 .它能提供中频 10 0kMz时小于 10dB的变频损耗 ,本振与信号之间优于 35dB的隔离度 .其结构特点利于大批量、低成本生产 。
A mixer employing a planar flip chip GaAs Schottky diode has been designed and tested at 24GHz. Using a planar diode eliminates the disadvantages of mechanical instability and large parasitical parameters associated with conventional whisker-contacted diodes. The realized mixer provides conversion loss lower than 10dB and LO _ to _ RF isolation higher than 35dB. It is specially suitable for applications in automotive electronic system because of its simple structure and low cost.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2003年第5期346-348,共3页
Journal of Infrared and Millimeter Waves
基金
国家 8 63计划 (批准号 2 0 0 2AA13 5 2 70 )资助项目~~