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A1GaInP四元系材料双异质结发光二极管的最佳Al组分分析 被引量:3

Optimum Al Composition Analysis on AlGalnP Quaternary Double Heterojunction Light-emitting Diodes
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摘要 鉴于双异质结发光二极管(DH—LED)限制层的Al组分的不确定性,本文通过分析载流子在双异质结中的输运及受约束情况,从理论上剖析了Al组分确定为一个最合适的取值时,有源层中的载流子应有一个最大数量的复合,此时LED的复合效率最高、发光最强。这个最佳Al组分的确认,对于器件结构设计以及相关的MOCVD材料生长有指导意义。 In the case of no determination of Al composition on blocking layer, this paper has proved that there is an optimum Al composition so that carriers in undoped layer would recombine on the largest scale by analyzing their transportion in double heterojunction. The definition of optimum Al composition would have a guidance to device structure's design and MOCVD epitaxy.
出处 《量子电子学报》 CAS CSCD 北大核心 2003年第5期595-598,共4页 Chinese Journal of Quantum Electronics
基金 国家科技攻关计划基金资助(00-068)。
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参考文献11

  • 1CASEYHG.异质结构激光器(上册)[M].北京:国防工业出版社,1983.206.
  • 2Wang Guohang.[D].Doctorial Thesis in Semiconductor Institute, Chinese Academy of Sciences (中科院半导体研究所博士学位论文),1998, 8 (in Chinese).
  • 3Huang Kun Han Yuqi.The Physics of Solid State (固体物理学)[M].Advanced Education Press,1988.326.
  • 4Huang Dexiu.Optoelectronics of Semiconductor (半导体光电子学)[M].Press of University of Electronic Technology,1994.60.
  • 5Huang Deshiu.Semiconductor Laser Device and Their Applications (半导体激光器及其应用)[M].National Defence Industry Press,1998.9.
  • 6Casey H G et al.Hetero-structure Laser Device (Book 1) (异质结构激光器 (上册))[M].National Defence Industry Press,1983.206.
  • 7Sugawara H, Itaya K. High-brightness InGaA1P green light-emitting diodes [J]. Appl Phys Lett, 1992, 61(15):1775.
  • 8WangGuohang.[D].中科院半导体研究所,1998:8(inChinese).
  • 9HuangDeshiu.半导体激光器及其应用[M].National Defence Industry Press,1998.9(inChinese).
  • 10HuangKun HanYuqi.固体物理学[M].Advanced Education Press,1988.326(inChinese).

共引文献1

同被引文献27

  • 1苗洪利,王进,王晶,陈静波,孟继武.LED白光照明光源的研制[J].光电子.激光,2004,15(6):657-659. 被引量:14
  • 2刘文超,夏冠群,李冰寒,黄文奎.高温AlGaInP/GaAs双异质结双极晶体管[J].Journal of Semiconductors,2005,26(4):756-759. 被引量:1
  • 3Jeff Y Tsao. Light emitting diodes(LEDs) for general illumination[R]. USA: Sandia National Laboratories, 2002.2.
  • 4Kovac J, Peternai L,Lengyel O. Advanced light emitting diodes structures for optoelectronic applications[J]. Thin Solid Films, 2003,433: 22-26.
  • 5Jeff Y Tsao Solid-state lighting:lamps,chips and materials for tomorrow[J]. IEEE Circuits & Devices, 2004,20(3):28-37.
  • 6Klaus Streubel, Norbert Linder, Patph Wirth, et al. High brightness AlGatnP light-emitting diodes[J]. IEEE Journal on Selected Topics in Quantum Electronics, 2002,8(2):321-332.
  • 7Jeff Y Tsao. Solid-state lighting: lamps, chips and materials for tomorrow[J]. IEEE Circuits & Devices, 2004,20(3):28-37.
  • 8Murakami Tetsurou, Kurahashi Takahisa, Ohyama Shouichi, et al. Light emitting diode[ P]. US Patent; 6501101,2002-12-31.
  • 9Stringfellow G B,Craford M G, High Brightness Light Emitting Diodes[M]. California. Academic Press, 1997.56.
  • 10Chang Shoou-Jinm, Chang Chih-Sung. 650 nm AIGalnP/GalnP compressively strained multi-quantum well light emitting diodes[J]. J Appl PHys, 1998,37 : 653-655.

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