一种高效率的二相位CMOS高压发生器

High-efficiency Two-phase CMOS High Voltage Generator

随着电源电压的不断降低和芯片面积的不断减小,电荷泵的效率已成为MOS电荷泵电路设计过程中最为人们关心的问题之一。由于传统的Dickson MOS电荷泵在每个传输管上都有阈值电压的拟失,使得它的效率很低。为了解决这一问题,各种电荷泵电路在不断地出现。四相位MOS电荷泵电路自发明以来,得到了广泛的应用,但是它需要产生四个时钟,增大了面积;更为重要的是,由于四相位电荷泵要求在一个周期内提供四个互不重叠的高电平,从而限制了时钟频率的提高。本文在四相位电荷泵的基础上,提出了一种新型的二相位的电荷泵电路,解决了提高效率和增加芯片面积以及时钟频率提升的矛盾。

The power efficiency of MOS charge pumping circuit is becoming one of the most important issues as the power supply decreasing continuously and the area of a chip. Owing to the threshold voltage losing of the transfer MOS, power-efficiency of traditional Dickson charge pumping is low. In this paper, a high-efficiency two-phase charge pumping circuit bases on the four-phase are invented, which solves the contradiction between the power-efficiency and the chip area consequently.