磁控溅射制备SmCo薄膜的工艺及磁性研究

Technological and Magnetic Study of SmCo Thin Films Prepared by Magnetron Sputtering

用直流磁控溅射方法制备了SmCo薄膜,通过正交设计实验考察了工艺因素对薄膜沉积速率的影响规律。研究结果表明,影响薄膜沉积速率的主要因素是溅射功率,其次为靶基距,在0.5～2.0Pa的压强范围内,Ar气压强的大小对溅射速率的影响很小。X-射线衍射结果表明:制备态的SmCo薄膜为非晶结构,500℃真空热处理后,薄膜中出现少量的微晶SmCo5化合物。磁性能测试表明:制备态SmCo薄膜的矫顽力随薄膜厚度的增加而显著下降;真空热处理过程中,薄膜结构缺陷及成分起伏减少,薄膜的矫顽力和饱和磁场强度显著下降,初始磁导率和饱和磁化强度显著增加。

SmCo thin films were prepared by DC magnetron sputtering and the relations between the technological parameters and its depositing rate were studied. The analysis of orthogonal experiments of technological parameters indicates that the sputtering power and the distance between the target and substrate have greater influences on the depositing rate, in contrast to that of Ar pressure in range of 0.5～2.0 Pa. Xray diffraction reveals that the microstructure of asdeposited SmCo film is amorphous, and a little amount of SmCo5 crystal appears after annealed at 500℃ in vacuum. As for the magnetic properties, the coercive force (Hc) of asdeposited film decreases with the increase of the thickness of the film. The reason why the annealing treatment leads to the decreases of Hc and saturated magnetic field, and the improvement of the initial magnetic susceptibility and saturated magnetization obviously is the reduction of the microstructure defection and the composition undulation during the treatment.