难镀基材上乙醛酸作为还原剂的化学镀铜

Electroless copper plating on difficultly deposited substrates by using glyoxylic acid as reducing agent

采用乙醛酸代替有害的化学药品 (如甲醛 )作为还原剂的化学镀技术 ,在工业纯铝片、工业纯钛片、以TiN作为扩散防护层的硅片和以TiSiN作为扩散防护层的硅片等难镀材料实现了化学镀铜。被覆铜镀层的表面形貌和晶粒结构的分析结果表明 :不同基材对铜镀层的组织结构影响很大 ,尤其在以TiN作为扩散防护层的硅片和以TiSiN作为扩散防护层的硅片上 ,获得了由平均尺寸为 5 0nm的颗粒所构成的较精细镀层 ,为半导体器件采用铜金属化工艺提供了新的方法。

Using glyoxylic acid to replace the harmful chemical substance such as formaldehyde as a reducing agent, an electroless copper plating on difficulty deposited substrates was fulfilled, which including Al,Ti and wafers having TiN and TiSiN as the barrier layers.The surface morphologies and grain structures of copper deposits prepared were analyzed. The results show that different substrates would influence the morphology of coating and inner structures greatly. Among the various substrates, the emphasis is put upon the deposits on the TiN and TiSiN barrier layers on silicon substrate. The fine structured coatings are composed of grains with their average diameters around 50 nanometer,which would provide a new method for copper interconnections in semiconductor devices.