GaInP/(Al_xGa_(1-x))InP多量子阱结构的光荧光特性分析

PHOTOLUMINESCENCE OF GaInP/(Al_xGa_(1-x))InP MULTI-QUANTUM WELL

利用金属有机化合物气相沉积(MOCVD)技术生长了GaInP/(AlxGa1-x)InP多量子阱(MQW)结构材料,对其进行光荧光特性测量,观察到在波长λ=647 8nm和λ=861 6nm处分别存在一个强发光锋和一个弱发光峰.理论计算和实测结果基本一致.

Photoluminescence of GaInP/(AlxGa1-x)InP MQW materials grown by MOCVD was measured. A strong peak at λ=6478 nm and a weak peak at λ=8616 nm on the photoluminescence spectrum were observed. The calulation results are basically in agreement with the actual results.