考虑溅射和碰撞损失的j×B离子引出收集

Ion Collection Simulation by j×B Scheme With Collision and Sputtering

研究了j×B法离子引出收集过程。影响引出过程收集率的两个主要因素是碰撞和溅射。对引出过程中收集板的收集情况进行了数值模拟,给出了收集板电参数对引出时间、碰撞与溅射的影响。收集板电参数对引出时间和收集率有很大影响,电流js及其变化率的增加对离子引出是有利的。总收集率随等离子体密度增大而减小。收集板间距对引出的影响较为复杂,增大极板间距,且限制准直孔径,引出效果得以改善。

The paper focuses on the ion collection simulation by j×B scheme with collision and sputtering. The effects of the collector electricity parameters on the collection time, collision and sputtering characteristics are studied. The collecting rate is increased with increasing of the current js and djs/dt, descended with increasing of the plasma density. The influence of the space between collectors is complex, augmenting the space and the collimated empty, improving collecting rate. 