摘要
报导了具有<111>晶向(轴向)的管状钼单晶基体化学气相沉积(CVD)钨单晶涂层的电解蚀刻工艺及形成的{110}晶面形貌。实验发现,通过电解蚀刻,表面的{110}晶面可以完全被蚀刻出来。蚀刻出来的{110}晶面呈台阶结构,并同<111>晶轴相平行。蚀刻出来的{110}晶面在圆管的表面分成均等六个区。每个区内{110}晶面的台阶面的宽度呈现周期性的变化,开始台阶面较宽,逐渐变窄,然后通过一过渡区后,进入下一周期,{110}晶面的台阶面的宽度又逐渐变宽。
The electric etching technology for preparing the{110}planes of CVD tungsten coating surface with<111>crystalline orientation and formed morphology of{110}planes on the CVD tungsten coating surface are presented.It was found that the{110}planes showed step structure on the cylindered sample surface and they paralleled with<111>crystalline orientation.The{110}planes are divided six regions.The step width of the(110)plane in every region is changed.At the beginning of every region the width of the plane is wide,then it gets small and small.After a transition area,the plane is into an-ther region and becomes wide again.
作者
吴尉
杨启法
郑剑平
WU Wei;YANG Qifa;ZHENG Jianping(China Institute of Atomic Energy)
出处
《物理测试》
CAS
2003年第5期4-6,16,共4页
Physics Examination and Testing
关键词
钨涂层
气相沉积
电解蚀刻
{110}晶面
chemical vapor deposition
tungsten coating
electric etching
{110}planes
