摘要
GaN直接带隙宽、电子迁移率高、击穿电场高以及热导率良好,近年来GaN体电子器件的研发进展迅速。GaN基电子器件主要包括HEMT、HBT、PD、MISFET及SAW器件。
同被引文献18
-
1谢自力,张荣,崔旭高,陶志阔,修向前,刘斌,李弋,傅德颐,张曾,宋黎红,崔影超,韩平,施毅,郑有炓.Mn掺杂GaN基稀磁半导体材料制备和特性研究[J].半导体技术,2008,33(S1):150-153. 被引量：1
-
2马洪磊,杨莺歌,刘晓梅,刘建强,马瑾.GaN薄膜的研究进展[J].功能材料,2004,35(5):537-540. 被引量：12
-
3Strite S,Morkoq H J.Vac Sci Technol.1992,B10(4):1237.
-
4Hidenori Shimawaki an,Hironobu Miyamoto.GaN-based FETs for Microwave High-Power Applications.Gallium Arsenide and Other Semiconductor Application Symposium,2005.EGAAS 2005.European.
-
5Dietl T,Ohno H,Matsukura F,et al.Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors[J].Science,2000,287(5455):1019-1022.
-
6Pearton S J,Park Y D,Abernathy C R,et al.Ferromagnetism in GaN and SiC doped with transition metals[J].Thin Solid Films,2004,447-448 ;493-501.
-
7Dalpian Gustavo M,Wei Su-Huai,Gong X G,et al.Phenomenological band structure model of magnetic coupling in semiconductors.Solid State Commun,2006,138(7):353-358.
-
8Lee Seung-Cheol,Lee Kwang-Ryeol,and Lee Kyu-Hwan.Electronic structures and valence band splittings of transition metals doped GaNs.J Magn Magn Mater,2007,310(2):e732-e734.
-
9文博,周建军,江若琏,谢自力,陈敦军,姬小利,韩平,张荣,郑有炓.InGaN太阳电池转换效率的理论计算[J].Journal of Semiconductors,2007,28(9):1392-1395. 被引量：11
-
10Wu J,Walukiewicz W,Yu KM. Unusual properties of the fundamental band gap of InN[J].{H}Applied Physics Letters,2002,(21):3967.
-
1陈裕权.CW输出功率为141W的AlGaN/GaN凹栅MISFET[J].半导体信息,2006,0(5):31-31.
-
2陈朝,傅仁武,陈松岩,刘宝林,S.A.Malyshev.用于OEIC的InP MISFET的研制[J].功能材料与器件学报,2000,6(3):297-300. 被引量：1
-
3周建军,柏松,孔岑,耿习娇,陆海燕,孔月婵,陈堂胜.Research on the diamond MISFET[J].Journal of Semiconductors,2013,34(3):48-50. 被引量：1
-
4牛南辉,王怀兵,刘建平,邢燕辉,韩军,邓军,沈光地.InGaN∶Mg薄膜的电学特性研究[J].固体电子学研究与进展,2008,28(1):4-7.
-
5相奇,罗晋生,曾庆明,周均铭,黄绮.具有MIS结构的n-AlGaAs/InGaAs/n-GaAs双调制掺杂赝HEMT[J].Journal of Semiconductors,1992,13(2):109-115.
-
6李斌,魏岚,温才.Static characteristics and short channel effect in enhancement-mode AlN/GaN/AlN N-polar MISFET with self-aligned source/drain regions[J].Journal of Semiconductors,2014,35(12):43-47. 被引量：2
-
7汪志刚,陈万军,张竞,张波,李肇基.Monolithic integration of an AlGaN/GaN metal-insulator field-effect transistor with an ultra-low voltage-drop diode for self-protection[J].Chinese Physics B,2012,21(8):459-464.
-
8杨瑞霞,陈宏江,武一宾,杨克武,杨帆.GaAs MISFET制备中柠檬酸/双氧水溶液对GaAs/Al_xGa_(1-x)As结构的选择湿法腐蚀[J].电子器件,2007,30(2):384-386. 被引量：1
-
9陈宏江,杨瑞霞,武一宾,杨克武.GaAs MISFET制备中的选择性腐蚀研究[J].半导体技术,2005,30(10):22-25.
-
10舒斌,张鹤鸣,王青,黄大鹏,宣荣喜.溶胶-凝胶法制备Bi_2O_3-ZnO-Nb_2O_5薄膜及GaN MIS结构C-V特性[J].Journal of Semiconductors,2007,28(9):1406-1410.
