单晶硅片的区域载荷法平坦化抛光

Chemical Mechanical Polishing for Silicon Wafer Planarization by Exerting Partial Region Load

基于弹性力学的圆板接触理论,分析了在抛光过程中硅片与抛光垫之间的接触压强分布与被抛光硅片的平面度误差的关系,提出了使用区域加载的方法来均等硅片抛光表面的接触压强,并进行了抛光试验,获得了平面度误差小于0 33μm的单晶硅片.这个研究为单晶硅片的集成平坦化抛光提供了一种新的方式.

Based on the circular plate contact theory of elastic mechanics, the relationship of the flatness error of polished silicon wafer to the contact pressure distribution between silicon wafer and polishing pad is analyzed. A new method for equating the contact pressure distribution by exerting partial region load on silicon wafer surface is suggested, and is investigated by polishing experiments. The silicon wafer with flatness error less than 0.33μm is obtained. This study provides a new way for chemical mechanical planarization.