硅衬底硫化锌薄膜发光器件的研制

Fabrication of the ZnS Thin Film Electroluminescence Devices on Silicon Substrate

用双舟热蒸发技术在硅衬底上制备硫化锌电致发光薄膜,用XRD、XPS技术和电致发光谱分析技术,研究该薄膜的微结构与发光特性.发现硅衬底上硫化锌薄膜与硫化锌粉末在晶体结构上存在差异,掺入的稀土元素铒呈三价,电致发光谱为Er3+的发光谱线,硅衬底硫化锌发光薄膜器件可与硅器件工艺兼容.

ZnS electroluminescence films were deposited onto singlecrystal silicon substrates by thermal evaporation technique with two evaporation boats .The microstructure and properties of the ZnS film were investigated by Xray diffraction technique (XRD),Xray photoemission spectroscopy (XPS) and electroluminescence spectroscopy. It was found that the crystal structure of the ZnS film on silicon substrate was different from the ZnS powder. The doped Er element existed as Er3+ state, and the electroluminescence spectrum comes from Er3+ in the film. The advantage of ZnS film electroluminescence device on silicon substrate is compatible with silicon microelectronic technology.