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大气状态下AFM针尖诱导氧化加工Ti膜的机理分析 被引量：3

Mechanism Analysis of AFM Tip Induced Oxidation of Ti in Air
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摘要 通过 AFM针尖诱导氧化加工 Ti膜的实验得到了凸出的 Ti膜氧化物高度与偏置电压成线性关系 ,并和针尖扫描速度成负对数关系 ,在前人的基础上深化了 AFM针尖诱导氧化加工的机理和理论模型 ,分析得到了合适的加工条件即 :偏压为 8V,扫描速度为 0 .1μm/ s. The mechanism of AFM tip induced oxidation is analyzed in details.According to the experimental results of AFM tip induced oxidation of titanium under various voltage biases and scanning speeds,it is found that the height of the titanium oxidation is linear with the voltage bias and with the negative log of the scanning speed.Based on the current theories,the mechanism and the theoretical model of AFM tip induced oxidation are improved,and the proper conditions,voltage bias of 8V and scanning speed of 0.1μm/s,to perform AFM oxidation of titanium are got.
作者 匡登峰 刘庆纲 胡小唐 郭维廉 张世林
机构地区 天津大学精密仪器与光电子工程学院精密测试计量技术及仪器国家重点实验室 天津大学电子信息工程学院
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2003年第12期1303-1306,共4页 半导体学报（英文版）
基金 教育部天津大学南开大学科技合作项目 教育部重点科技项目 (No.0 2 0 43 )基金资助~~
关键词 AFM针尖诱导氧化 阳极氧化 Ti氧化物 偏压 扫描速度 Ti膜 大气状态 AFM tip induced oxidation anodic oxidation Ti oxide bias voltage scanning speed
分类号 TN304.05 [电子电信—物理电子学]
  • 相关文献

参考文献10

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二级参考文献6

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共引文献2

同被引文献30

  • 1秦卓仁.用最大残差法评定测量精密度及其可靠性讨论[J].电测与仪表,1989,26(1):7-9. 被引量：5
  • 2Matsumoto K.STM/AFM nano-oxidation process to room temperature operated single electron transistor and other devices.Proceedings of the IEEE,1997,85(4):612
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  • 6Avouris P,Hertel T,Martel R,et al.Atomic force microscope tip-induced local oxidation of silicon:kinetics,mechanism,and nanofabrication.Appl Phys Lett,1997,71:285
  • 7Bubanja V,Matsumoto K,Gotoh Y.Single electron memory at room temperature:experiment and simulation.Jpn J Appl Phys Lett,2001,40:87
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引证文献3

二级引证文献1

Journal of Semiconductors
2003年 第12期

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