摘要
提出了一种基于串联模式精确地检测半导体二极管正向电特性的新方法 .利用该方法 ,不仅可以得到二极管在不同电压下的串联电阻、结电容、结电压、理想化因子等值 ,还能判断一个实际的二极管有无界面层存在并得到其界面层阻抗值 .用此方法对 Ni/ n- Ga N肖特基二极管进行了检测 ,所有的实验结果与理论分析相符合 .实验中确认了在 Ga N肖特基二极管中结的负电容和具有非线性电阻和电容的界面层的存在 .
A new method to analyze the forward electrical characteristics of semiconductor diodes by using series mode is developed.This method can not only accurately measure the values of series resistance,junction capacitance,junction voltage,and ideality factor at various forward biases,but also detect and measure an interfacial layer in a real diode.Various n-GaN Schottky diodes are measured by this method,and all the experiment results are consistent with the theoretical analyses.Negative capacitance (NC) of the junction and the interfacial layer with nonlinear resistance and capacitance are confirmed in GaN Schottky diodes.
基金
国家自然科学基金资助项目 (批准号 :6978960 1
698760 0 2 )~~
关键词
半导体二极管
正向电特性
串联模式
界面层
负电容
精确检测
semiconductor diodes
forward electrical characteristic
series mode
interfacial layer
negative capacitance
