摘要
提出了通过隧道带间级联实现半导体激光器有多个激射波长的新型物理思想 ,并以GaAs为隧道结 ,InGaAs应变量子阱为有源区 ,利用金属有机物化学气相沉积 (MOCVD)生长了含有两个有源区的双波长半导体激光器。制备了 90 μm条宽的脊型波导器件结构 ,测试得到了能同时激射 95 1nm和 986nm两个波长的双波长半导体激光器 ,腔面未镀膜时的斜率效率达到了 1 12W A ,垂直远场为基模 ,水平方向发散角为 10° ,垂直方向发散角为 36°。
A novel semiconductor laser is proposed which could have multiwavelength cascaded by tunnel junction, and a dual-wavelength semiconductor which has two active regions is grown by MOCVD with GaAs as tunnel junction and InGaAs strain quantum well as the active regions. A ridge structure of 90 μm stripe width is fabricated. The measurement results show that the laser can have two lasing wavelengths, 951 nm and 986 nm; the slop efficiency reaches 1.12 W/A without coating; and the far-field FWHM are 10° and 36° for horizontal and vertical direction, respectively.
出处
《中国激光》
EI
CAS
CSCD
北大核心
2003年第11期961-964,共4页
Chinese Journal of Lasers
基金
国家自然科学基金 (6 0 0 770 0 1)
国家 973(G2 0 0 0 0 6 83 0 2 )
北京市自然科学基金 (4 0 0 2 0 0 3)资助项目
关键词
激光技术
半导体激光器
多波长
金属有机物化学气相沉积
Metallorganic chemical vapor deposition
Scanning electron microscopy
Semiconductor quantum wells
Spectrum analysis
Structural design
Tunnel junctions
