4H-SiC器件击穿特性的新型解析模型

A new analytical model for the breakdown characteristic of 4H-SiC devices

基于4H SiC材料参数,同时考虑雪崩碰撞和带间隧穿两种机制,建立了一套新型击穿解析模型.模型中首次考虑了雪崩碰撞和带间隧穿两种机制,能够反映温度、掺杂浓度等参数对器件击穿特性的影响.利用这一模型计算得到4H SiC微波功率MESFET极限功率特性.采用MATLAB编程工具计算得到的结果与实验结果符合较好.

In the development of SiC devices, it is necessary to set up a proper model to describe the critical condition for the devices electrical operation. In our description of the breakdown characteristic, both the avalanche and the tunneling mechanism are, for the first time, taken into account and a new analytical model based on 4HSiC material parameters is estabilished. With this model, the dependence of the breakdown voltage on the doping concentration and device operational temperature is analyzed with the maximum power of 4HSiC MESFETs presented. In this paper, the model is realized by the MATLAB program tool and the calculated result is in good agreement with the experimental one.