K_2MnSnTe_4的溶剂热合成和反射光谱研究

Solvothermal synthesis and diffuse reflectance spectra of K_2MnSnTe_4

采用溶剂热法 ,以n(K2 Te4)∶n(MnCl2 ·4H2 O)∶n(SnTe) =1∶ 1∶1的摩尔比、乙二胺作溶剂 ,在 16 0℃下反应 6d ,生成黑色块状晶体K2 MnSnTe4。其结构由具有扩展的网状共价骨架的Zintl负离子 [(MnSnSe4) 2 -]n 和K+正离子堆积而成。漫反射光谱研究表明该晶体具有 1 75eV能隙 (Eg) ,属于半导体 ,对太阳能具有选择吸收的特性。

A solvothermal technique was used for synthesis of K 2MnSnTe 4 which contains zintl anions, [(Mn SnSe 4) 2- ] n and K cations. The mixture of K 2Te 4, MnCl 2·4H 2O and SnTe with a molar ratio 1∶1∶1 was reacted at 160?℃ for 6 days. An optical property study by use of reflectance spectroscopy for the powder sample suggests that this compound is semiconductor with a band gap of 1.75eV.