摘要
The electroluminescence of ZnS doped with terbium fluoride thin films prepared b y ra dio frequency magnetron sputtering method was reported. The characteristics of t h e ZnS∶TbF 3 thin film electroluminescence devices, such as film characteristi cs of the ZnS∶Tb active layer, substrate temperatures during magnetron sputteri ng and Tb concentration of the active layer, were systematically investigated. The results show that annealing can evidently improve the luminescence performance of the luminescence device.
The electroluminescence of ZnS doped with terbium fluoride thin films prepared b y ra dio frequency magnetron sputtering method was reported. The characteristics of t h e ZnS∶TbF 3 thin film electroluminescence devices, such as film characteristi cs of the ZnS∶Tb active layer, substrate temperatures during magnetron sputteri ng and Tb concentration of the active layer, were systematically investigated. The results show that annealing can evidently improve the luminescence performance of the luminescence device.
基金
ProjectsupportedbytheNationalNaturalScienceFoundationofChina ( 5 9982 0 0 1)andNationalNaturalScienceFoundationofBeijing( 40 12 0 10 )
