摘要
Interface reaction (IR) is a frequently observed phenomenon in the study ofadvanced thin film materials. It is very important to study the reaction conditions at which IRhappens and then to suppress or make use of it, the necessary conditions, including boththermodynamical and dynamical conditions of IR were discussed in detail. IRs in various systems,including oxide/silicon, oxide/metal, metal/metal, metal/semiconductor andsemiconductor/semiconductor, were reviewed. Methods to suppress and make use of IR were alsointroduced.
Interface reaction (IR) is a frequently observed phenomenon in the study ofadvanced thin film materials. It is very important to study the reaction conditions at which IRhappens and then to suppress or make use of it, the necessary conditions, including boththermodynamical and dynamical conditions of IR were discussed in detail. IRs in various systems,including oxide/silicon, oxide/metal, metal/metal, metal/semiconductor andsemiconductor/semiconductor, were reviewed. Methods to suppress and make use of IR were alsointroduced.
基金
This work was financially supported by the National Science Foundation of China (No.50271007) and Beijing (No.2012011)
