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深亚微米pHEMT器件的建模 被引量:1

Deep sub-micron pHEMT device modeling
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摘要 针对0.25μmpHEMT器件,建立了其小信号和非线性等效电路模型,采用窄脉冲测试技术提高了深亚微米器件的测试精度,采用改进的Materka模型提高了模型的模拟精度。已建立的两种0.25μmpHEMT模型已用于毫米波VCO和PA的设计中。 The small-signal and nonlinear equivalent circuit models are built for0.25μm pHEMT.The narrow pulse test technique is utilized to improve the test accuracy,and modified Materka model is used to enhance simulation accuracy.The two built0.25μm pHEMT models have been applied to MMW IC designs such as VCO and PA.
作者 韩育 高学邦
出处 《微纳电子技术》 CAS 2003年第12期35-38,共4页 Micronanoelectronic Technology
关键词 深亚微米 PHEMT器件 脉冲测试 非线性等效电路模型 半导体器件模型 deep sub-micron pHEMT pulsed test modeling
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同被引文献1

  • 1MRUNAL A K,MAKARAND S,PATRIKAR R M.Power amplifier linearization using a diode[C] // IEEE Electrotechnical Conference.Spain,2006:173-176.

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