新型垂直腔半导体光放大器中有效腔长的理论分析

Theoretic analysis on the effective cavity length of new vertical-cavity semiconductor optical amplifiers

从新型垂直腔半导体光放大器 (VCSOAs)典型的对称模型出发 ,分析了入射光在微腔中的分布布喇格反射器 (DBRs)上由于反射延迟而导致相位渗透 ,进而增加了有源区的额外长度 (有效腔长 )。计算得出了相位渗透深度随DBRs相对折射率差变大而变小 ,同时给出了反射模下VCSOAs增益峰值、增益带宽积随有效腔长变大而下降的规律。

The phase penetration is analyzed for the reflection delay on the Distributed Bragg Reflectors(DBRs)from the new vertical-cavity semiconductor optical amplifiers'(VCSOAs)symmetrical model.The phase penetration extends the active region with the “additional length”(effective cavity length).The calculated results show the phase penetration depth decreases along with the DBRs'relatively refractive index difference increase and present the VCSOAs'gain and gain-bandwidth product decrease with the effective cavity length increase.