摘要
采用正交试验方法研究了磁控溅射的工艺因素:溅射功率、溅射气压、基片到靶材的距离等对SmFe2超磁致伸缩薄膜制备的影响;用SEM能谱仪研究了获得的SmFe2薄膜的成分;用小角度X射线掠射法研究了获得的SmFe2薄膜的结构;得到了磁控溅射制备SmFe2薄膜的优选工艺条件;并测量了该工艺条件下SmFe2GMF的磁致伸缩系数λ.
The effect of the technology factors such as sputtering power, sputtering pressure and the distance of the sputtering on manufacturing the amorphous thin film of SmFe2 were investigated by means of orthogonal test method and find the best technology on it. The glancing X-ray shows that the structure of the SmFe2 film is amorphous. And experiments of SEM indicated the compositions of the thin film of SmFe2. And the value of λ of SmFe2 amorphous thin film deposited by using this technology has been measured.
出处
《福州大学学报（自然科学版）》
CAS
CSCD
2003年第6期690-694,共5页
Journal of Fuzhou University(Natural Science Edition)
基金
福建省科委高新技术与火炬计划(99-H-44)
福州大学科技发展基金(XKJ(QD)-01/3)
福建省高校测试基金(JC200044)
