退火温度对硅基溅射银膜微结构和应力的影响

Effect of annealing temperature on the stress properties of sputtering Ag films on Si wafers

用直流溅射法在硅(111)基底上制备银膜,膜厚为380nm。用BGS6341型电子薄膜应力分布测试仪对膜应力随退火温度的变化进行了研究,结果表明:膜应力随着退火温度的升高而增大,在400℃退火温度下膜应力变化明显。用MXP18AHF型X射线衍射仪测量了膜的衍射谱,对膜微结构随退火温度的变化进行了讨论。制备的Ag膜仍为面心立方结构,呈多晶状态,平均晶粒尺寸为23.63nm,薄膜晶格常数(0.40805nm)比标准样品晶格常数(0.40862nm)稍小。

This paper investigate the effect of annealing temperature on the microstructure and stress properties of Ag films on Si wafer. The result shows that the stress increases with increasing annealing temperature. The result also shows that the polycrystalline Ag films were consisted of fcc Ag nanoparticles with an average size of 28.05nm. The lattice constant of the Ag nanoparticle (0.40205nm) was slightly smaller than that of Ag powder (0.40862nm).