期刊文献+

In-5%Cu合金的液态结构与粘滞性研究 被引量:2

Study on Liquid Structure and Viscosity of In-5%Cu Alloy
下载PDF
导出
摘要 利用高温液态金属X射线衍射仪研究了In-5%Cu合金熔体的结构。结果表明:随温度由400℃升高到900℃,In-5%Cu合金熔体的平均最近邻原子间距r1总体上呈现出减小的趋势,原子配位数Ns的变化比较复杂,r1和Ns都在600℃左右出现转折,原子团簇出现热收缩现象,其结构在600℃附近出现异常变化。利用回转振动粘度仪对In-5%Cu合金在液相线以上不同温度进行粘度测量的结果表明:随温度升高,In-5%Cu合金熔体的粘度值减小,总体上呈现指数变化规律,在600℃左右发生突变。粘度突变温度与结构突变温度一致。 The structure of In-5%Cu alloy melt was studied at 400degreesC, 600degreesC, 700degreesC, 800degreesC, 900degreesC, respectively, by using a high-temperature X-ray diffractometer. The experimental results show that with increasing temperature from 400degreesC to 900degreesC, the nearest interatomic distance r(1) of In-5% Cu alloy melt decreases on the whole. The change in the coordination number Ns is complicated. The transition of r(1) and N-S occurs at about 600degreesC. Thermal contraction phenomenon of atom clusters can be found. An anomalous change in structure occurs at about 600T. The dynamic viscosity of In-5% Cu alloy was measured at different temperatures above liquidus by using a torsional oscillation viscosimeter. The results show that the viscosity of In-5% Cu alloy melt decreases as temperature increases and meets the exponential correlation on the whole. A sudden change in viscosity occurs at about 600degreesC. The sudden change temperature of viscosity is in accordance well with that of structure, which suggests that the viscosity has a close relation to the structure of melt.
出处 《稀有金属材料与工程》 SCIE EI CAS CSCD 北大核心 2003年第11期911-914,共4页 Rare Metal Materials and Engineering
基金 国家自然科学基金资助项目(50231040) 山东省自然科学基金资助项目(Z2001F02)
关键词 In-5%Cu合金 液态结构 团簇 粘滞性 粘度 In-5% Cu alloy liquid structure cluster viscosity
  • 相关文献

参考文献1

二级参考文献7

  • 1毛为民 赵新兵.金属的再结晶和晶粒长大[M].Beijing:Metallurgy Industry Press,1994.162.
  • 2Breibach J, Ubelsmeyer K L, Asing Th M et al. Development of a Bump Bonding Interconnect Technology for GaAs Pixel Detectors[J] . Nuclear Instruments and Methods in Physics Research, 2001, A470:576-582.
  • 3Gemmea C et al. Study of Indium Bumps for the ATLAS Pixel Detector[J].Nuclear Instruments and Methods in Physics Research, 2001, A465:200 - 203.
  • 4Kim Sudook, Ledbetter Hassel. Low-temperature Elastic Coefficients of Polycrystalline Indium[J]. Materials Science & Engineering, 1998, A252 (1): 139-143.
  • 5Keches J et al. Texture Analysis of Indium Films Grown on GaAs(100) by Molecular Beam Epitaxy[J]. Applied Physics Letters, 1997, 71(17): 2460.
  • 6Keches J et al. Orientation Relationship Between Indium Films and GaSh(1 1 1) B: Annealing- induced Transformation of Fibre Texture into Heteroepitaxy[J] . Joamal of Crystal Growth,1998,192:84 - 88.
  • 7Alejandro B. Model of Texture Development in Polycrystalline Films Growing on Amorphous Substrates with Different Topographies[J]. Thin Solid Films, 2001, 389:288-295.

同被引文献35

  • 1郭宝增.GaSb材料特性、制备及应用[J].半导体光电,1999,20(2):73-78. 被引量:9
  • 2杨中喜,耿浩然,陶珍东,孙春静.液态Sn的粘度及其熔体微观结构的变化[J].原子与分子物理学报,2004,21(4):663-666. 被引量:15
  • 3Iida T,Guthrie R I L.The Physical Properties of Liquid Metals[M].Oxford:Clarendon Press,1993:47
  • 4Lihl F,Schwaiger A.Z Metallkd[J].1967,58(11):776
  • 5Sun M H,Geng H R,Bian X F.Acta Metallurgica Sinica[J].2000,36(11):1134
  • 6Gui Manchang(桂满昌).Modification Mechanism of Al-Si Alloys and the Shape Control of Eutectic Silicon(Al-Si合金变质机理及共晶Si形态控制)[D].Harbin:Harbin Institute of Technology,1994
  • 7Narayanan A L,Sumuel F H.Metal Mater Tran[J].1994,25A:1761
  • 8Qin J Y,Bian X F,Wang W M.J Phys:Condens.Matter[J].1998,10:1211
  • 9Bian X F,Wang W M.Materials Letters[J].2000,44:54
  • 10Schvidkovskii E G.Gostekhteorizdat[M].USSR:Science Press,1955:123

引证文献2

二级引证文献2

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部