摘要
研究三维热传导型半导体瞬态问题的特征有限元方法及其理论分析,其数学模型是一类非线性偏微分方程的初边值问题。对电子位势方程提出Galerkin逼近;对电子、空穴浓度方程采用特征有限元逼近;对热传导方程采用对时间向后差分的Galerkin逼近。应用微分方程先验估计理论和技巧得到了最优阶H1误差估计。
Characteristic element methods are introduced and analyzed for approximating the solutions of three-dimensional transient behavior of semiconductor with heat-conduction, whose mathematical model is initial and boundary problem of nonlinear partial differential equation system. Electric potential and heat-conduction equation are approximated by a Galerkin procedures. electron and hole concentrations are approximated by characteristic element methods. Optimal order error estimates in H^1 are demonstrated.
出处
《工程数学学报》
CSCD
北大核心
2003年第6期7-13,共7页
Chinese Journal of Engineering Mathematics
基金
国家自然科学基金和数学天元基金(TY10126029)资助课题.
关键词
特征有限元
半导体瞬态
热传导
最优误差估计
transient behavior of semiconductor
heat-conduction
characteristic element
optimal error estimate