摘要
本文设计了一款W波段功率放大器,采用发射极宽度为1μm In P DHBT工艺。该PA采用了5级共射放大电路结构,其中前两级采用的器件发射极宽度为2×1μm,后三级采用的器件发射极宽度为4×1μm,电路原理图和版图联合仿真结果表明该PA在90-98GHz频带内,增益大于12d B,94GHz时饱和输出功率达到17.9d Bm,芯片面积为1.61mm×0.98mm。目前电路正在流片制作当中。
In this paper, a monolithic W-band power amplifier(PA) is presented by using 1μm emitter width In P DHBT technology. The PA is consisted by 2 stages 2×1μm and 3 stages 4×1μm emitter width transistors. The total circuit achieve more than 12 d B small signal gain from 90 GHz to 98 GHz. The saturation output power reaches 17.9d Bm at 94 GHz. The chip area is 1.60mm×0.98 mm. This W-band power amplifier MMIC is now being fabricated in progress on the NEDI compound semiconductor process line.
出处
《微波学报》
CSCD
北大核心
2014年第S1期106-108,共3页
Journal of Microwaves
