S波段高效率内匹配功率放大器设计

S-Band High Efficiency Internally Matched Power Amplifier

氮化镓(Ga N)作为新一代半导体材料,具有输出功率大和效率高等特点,因此,Ga N微波功率器件成为近几年研究的热点。随着Ga N功放管的功率不断提高,以Ga N为基础的微波功率器件在应用上取得了很大的进步。本文针对Ga N功放管的特点和现状进行了介绍,利用二次谐波控制技术和功率合成技术设计了S波段高效率内匹配功率放大器。电路采用南京电子器件研究所自主研发的栅宽为12mm的Ga N HEMT,设计的内匹配功率放大器在2.7~3.5GHz频带内,输出功率大于47d Bm,功率增益大于10d B,功率附加效率达到70%。

Gallium nitride(Ga N), as a new generation of semiconductor materials, features high output power and high efficiency characteristics, Ga N microwave power devices become a research hotspot in recent years. With power increasing of the Ga N power amplifier, the application of the Ga N microwave power devices have made a great progress. In this paper, characteristics and development state of the Ga N power devices are introduced, and an S-Band high efficiency internally matched power amplifier based on second harmonic control and power combining technology has been developed. Using one 12 mm Ga N HEMT transistor made by Nanjing Electronic Devices Institute, the amplifier demonstrates an output power of more than 47 d Bm,with a gain of over 10 d B and PAE of 70% across the band of 2.7~3.5GHz.