TaN薄膜在微波薄膜匹配负载器件中的应用

Applications of TaN Thin Film in Microwave Matching Terminations

本文研究了Ta N薄膜在微波薄膜匹配负载器件中的应用。利用Ta N薄膜设计了工作频率为DC-18GHz,承受功率10W的匹配负载1,工作频率为DC-18GHz,承受功率60W的匹配负载2,以及工作频率为30-35GHz,承受功率为100W的高频高功率匹配负载3。采用磁控溅射制备了Ta N电阻膜,采用掩膜图形化技术制备了所设计的薄膜匹配负载器件。测试结果表明,三款器件的电压驻波比在各自工作频率范围内均小于1.3,和仿真结果基本一致。同时对器件3测试了其功率负载能力,在加载功率100W,加载时间60分钟后,器件表面最高温度为107°C,匹配负载的电阻值变化了1.4%,表明所制备的负载器件具有良好的功率承载能力。

The applications of Ta N film in microwave thin film resistance terminations had been studied in this work. Three film resistance terminations had been designed with Ta N film. The resistance termination 1 operates at DC-18 GHz with 10 W applied power. The resistance termination 2 operates at DC-18 GHz with 60 W applied power and the resistance termination 3 operates at 30-35 GHz with 100 W applied power. The designed Ta N thin film terminations had been fabricated by magnetron sputtering and mask pattern technique. The measurement results show that the VSWR of three terminations is less than 1.3 within the operating frequency range, which were agreed with the simulations results. Power handling capacity is tested on termination 3. After 100 W appled power with 60 minutes, the maximum surface temperature of the Ta N thin film termination is about 107 °C. The variation of the resistance is only 1.4%, which show that the prepared Ta N film terminations can work well with the applied power.