双极型晶体管强电磁脉冲损伤模型与仿真分析

The Damage Mechanism Model and Simulation of Bipolar Junction Transistor Caused by Electromagnetic Pulse

结合双极型晶体管工艺仿真和强电磁脉冲效应机理,建立双极型晶体管电磁脉冲效应仿真分析的二维电-热模型。通过分析器件内部电场强度,电流密度和温度分布的变化,研究了由基极和集电极注入电磁脉冲时的损伤效应,结果表明,基极注入主要损伤器件的B-E结,集电极注入首先损伤器件的B-C结,基极注入更易毁伤器件,与实验对比符合较好。

Based on the bipolar junction transistor process simulation analysis and damage mechanism of device caused by electromagnetic pulse, a two-dimensional electro-thermal model is established in this paper. Considering the variation analysis of distribution of the electric field, the current density and the temperature, the damage mechanism process of BJT injected by electromagnetic pulse from the base and the collector is studied. The simulation results show that, when injection from the base, the hot spot locates near the B-E junction, when injection from the base, the hot spot locates near the B-C junction, the base injection is easier to burnout the BJT than the collector injection, and the simulation results are in good agreement with the experimental ones.