基于RTD材料结构与参数的RTO设计与模拟

RTO Design and Simulation Based on RTD Material Structure and Parameter

首先对THz波源的共振隧穿二极管(RTD)设计中的关键问题,即从材料与结构出发,对如何提高RTD的截止频率和输出功率进行了分析研究,并利用Win Green软件,仿真设计出具有高振荡频率和输出功率的RTD。在此基础上,采用RTD的共振隧穿理论和缝隙天线的结构模型,利用PSpice仿真软件构建了包含RTD材料与结构参数以及缝隙天线结构参数在内的完整太赫兹振荡器(RTO)的等效电路模型。振荡频率约为1.02THz,输出功率约为88.2μW,本文工作为今后研究该类器件奠定了基础。

This paper discusses the key problems of designing a resonant tunneling diode( RTD) of terahertz( THz)wave source,that is,from the perspective of materials and structures,analysis has been conducted on how to improve the cut-off frequency and output power of RTD. With the use of the tunneling model theory and the structural model of slot antenna,the complete resonant terahertz oscillator( RTO) equivalent circuit model,including the material and structural parameters of RTD and the structural parameters of slot antenna,is established by the PSpice simulation software. The RTD with high oscillation frequency and output power is designed by the simulation software Win Green. The simulation results show that the oscillation frequency is about 1. 02 THz and the output power is about 88. 2μW. This paper provides a solid foundation for the future research on such devices.