摘要
基于X波段源,通过9×2×2次倍频链实现了输出约1-2m W的320-356GHz全固态倍频源。该信号源作为本振信号驱动664GHz接收前端的二次谐波混频器,该混频器采用了有源偏置技术以降低混频器的本振驱动功率和接收机的噪声温度。仿真结果表明,混频二极管在0.3m W本振驱动功率及0.35V直流偏置下,在650-680GHz带宽内,仿真得到的单边带变频损耗小于12d B,666GHz最小损耗为10.8d B。
Based on X-band signal sources, a 320-356 GHz 9×2×2 solid-state multiply chain is realized with output power of 1-2m W. Using this source as local oscillator to pump the 664 GHz second harmonic mixer, the DC bias is applied in the mixer to lower the requirement of pumping power and noise temperature. The simulated results shows that, to the mixing diodes, with pumping power of 0.3m W and DC bias of 0.35 V, the SSB conversion loss of the mixer is lower than 12 d B in 650-680 GHz frequency band, and the lowest is 10.8d B at 666 GHz.
出处
《微波学报》
CSCD
北大核心
2015年第S1期14-17,共4页
Journal of Microwaves
关键词
GaAs肖特基二极管
太赫兹
倍频
谐波混频
GaAs Schottky diodes,terahertz wave,frequency multiplying,subharmonic mixing