对极鳍线结构的Q波段固态功率放大器设计

Design of a Solid-state Power Amplifier by Using Antipodal Finline-to-microstrip Transition in Q-band

本文介绍了一款频段44GHz^46GHz,采用对极鳍线微带过渡结构的功率放大器设计方法。本文对对极鳍线微带过渡结构进行模拟仿真并测试背靠背结构的插入损耗,其插入损耗在44GHz^46GHz频段内小于2d B。电路设计中采用金丝键合工艺连接裸片与微带电路,并用HFSS对其进行仿真。选用2W裸片进行装配,测试结果表明在44GHz^46GHz频段内,饱和功率输出1.3W以上,增益大于13d B,效率在8%以上。以此模块为基本单元电路,利用功率合成技术完成Q波段高功率放大器单机的设计。

An design of a solid-state power amplifier in 44GHz^46GHz by using antipodal finline-to-microstrip transition was presented.A low back-to-back insertion loss of less than 2d B at the range of 44GHz^46GHz frequency was obtained from the transition structure.The design used gold boding wire connecting the die to the microstrip and the structure was simulated by HFSS.A 2 Watt level die was selected for the amplifier module.The test result shows that Psat of 1.3watt and gain of 13 d B in the frequency range of 44GHz^46GHz.It can be used as amplifier cell to consists high power amplifier in Q-band.