毫米波硅片集成MEMS滤波器

Millimeter Wave Silicon SIW MEMS Filter

滤波器作为通信系统中必不可少的微波无源器件[1]。滤波器的性能指标和体积直接影响整个通信系统的性能和体积。研制小型化和高性能的滤波器已经成为主要趋势。本章主要介绍一个毫米波段MEMS(Micro-Electro-Mechanical System)滤波器的设计和相关MEMS工艺的制作流程,谐振器采用单层硅基片集成(Substrate Integrated Waveguide,SIW)结构,该滤波器实现了小型化、集成化以及高Q值。输入输出采用共面波导-微带转换结构,易于探针测试台的快速测试滤波器并且方便与外部电路集成。滤波器设计采用双模提取法确定耦合结构尺寸。关键工艺为体硅加工的ICP(Inductively Coupled Plasma)深硅刻蚀。本文设计制作的滤波器指标为:中心频率为35 GHz,1d B带宽2G,驻波小于1.5。最终滤波器芯片尺寸为10.2 mm×4 mm×0.4 mm。

Filter is an essential microwave passive components in the communication systems [1].It's performance and volume affect the performance and size of the entire communication system directly.Development of miniaturization and high performance has become the main trend.This paper introduces a millimeter wave band MEMS filter design and it's production processes, we choose the silicon SIW structure as the resonator.The filter has good performance:miniaturization, integration and high Q.Input and output structureare coplanar waveguide-microstrip conversion structure, so it's easy for testing and integrating with external circuit.We use dual-mode method to determine the coupling structure size.The key technology to make this filteris ICP deep silicon etching.Filter center frequency of 35 GHz, VSWR less than 1.5,filter chip size is 10.2 mm × 4 mm × 0.4 mm.