摘要
本文基于MEMS工艺设计了一种小型化Ka波段滤波器,该滤波器采用高阻硅基片集成波导(SIW)结构形式。理论分析了滤波器的结构参数并使用三维电磁场分析软件HFSS对该结构进行了仿真。设计得到了中心频率36.3GHz,相对带宽1.6%,插入损耗4d B的滤波器,回波损耗优于20d B,在f0±1.3GHz处带外抑制达到40d B。芯片尺寸为10mm×2mm×0.4mm。相对于传统波导结构的滤波器,大大缩小了体积,实现了小型化,容易集成在系统中,具有重要意义。
A miniaturized Ka-band filter with the silicon-based SIW(substrate integrated waveguide) structure was designed based on the MEMS technology. The structure parameters of the filter were analyzed and calculated theoretically, and the filter was simulated by 3D electro-magnetic field analysis software HFSS. The Ka-band MEMS filter was designed with a center frequency f0 of 36.3GHz, and the bandwidth 1.6%. The results show that the insertion loss is 4 d B, the return loss is 20 d B, and the rejection at f0±1.3GHz is 40 d B. The final size of the chip is 10 mm×2 mm×0.4 mm.
出处
《微波学报》
CSCD
北大核心
2016年第S2期354-356,共3页
Journal of Microwaves
基金
中央高校基本科研基金(A03011023801006002)
关键词
滤波器
基片集成波导
KA波段
filter
substrate integrated waveguide
Ka-band
