X波段六位移相器设计

Design of X-band 6 Bit Phase Shifter

采用SiGe BiCMOS工艺设计了一个X波段六位移相器。该移相器工作频率8~12GHz,移相范围为360°,步进5.625°。移相器采用高通/低通滤波器结构,通过六级移相单元以及多个单刀双掷开关级联实现。测试结果显示,芯片在1.2V的电源电压下,10GHz频率处插损约为15dB,在64种移相状态下,RMS相位误差1.6°,幅度偏差0.3dB,端口回波损耗小于-16dB。芯片不包含焊盘的尺寸约为2.65mm×0.81mm。

A X-band 6 bit phase shifter was designed,realized in SiGe BiCMOS technology. This phase shifter has a shifting range of 360° and step of 5.625°. High-pass/low-pass filter topology was utilized by connecting six phase shifting cell and several SPDT. With 1.2V supply voltage, the measured insertion loss is about 15 dB at 10 GHz, the RMS phase error and amplitude variation are 1.6° and 0.3dB for all the 64 phase states, and the input and output return losses are less than-16 dB. The chip size is 2.65mm×0.81 mm excluding pads.